Class-E PA Appendix
On this page we give a little more background information for the design as well as the design process used for the Class-E Power amplifier.
Below is a list of all the topics we cover in this page. Click on any of these links to go to that section.
CLASS-E PA OVERVIEW
The class-E Power Amplifier (PA) is a switch mode PA which has a potential theoretical efficiency of approximately 100%. Being a switching mode PA, the Power FET is used as an ON-OFF switch. Using the basic switching mode PA with the circuit topology seen in image (a) below, we can only achieve a maximum efficiency of ~81% due to losses from all other odd harmonics besides the fundamental. To overcome this efficiency limitation, first a series resonator (LC) is added at the output to act like a short at the fundamental frequency, and an open at all other harmonics. Next a capacitor (Cp) placed in parallel with the switch to store charge when the switch is closed and to provide current when it is open. Finally an inductor (Ls) is put in series with the resonator to phase shift the current to ensure it is 0 (zero) Amps at the switch closing point. The resulting Class-E circuit topology is shown in image (b).
The Class-E PA was used within our Magnetically Coupled Resonant, Wireless Power Transmission system (or MCR-WPT system) based on the now obsolete Rezence WPT standard (superceded by Qi). This is mainly due to the high efficiency of the Class-E PA which results in most of the power going to the Transmitter coils of the Rezence system. Also, the fundamental load of the Class E PA is inductive, which is good for driving WPT coils.
For more detailed information on the basic theory of the Class-E PA, the design methodology used, design specifications and results, check out section 2.3 of the thesis. For more brief overview of the Rezence WPT standard, see section 1.1.1 The thesis can be obtained from the Ryerson University library by clicking the button below.
DESIGN COMPONENT VALUES
This section provides the list component values used in the design of the Class-E Power Amplifier. The list is broken down into the 4 groups below:
- Ideal Class E Parameters
- Output Matching Network
- Input Matching Network
- Miscellaneous
PARAMETER | VALUE | |
VDC | 36V | |
Cp-external | 68pF | |
Cp-internal | 68pF | |
Lshift+Lres | 15uH | |
Cres | 39pF |
PARAMETER | VALUE | |
C2 | 470pF | |
C3 | 620pF (150+470) | |
L3 | 500nH |
PARAMETER | VALUE | |
C6 | 2750pF (1600+820+330) | |
C7 | 10nF | |
C8 | 220pF | |
L6 | 500nH |
PARAMETER | VALUE | |
Choke Inductors (L1 and L4) | 15uH | |
Input bias voltage | 3V | |
Input Power | 2 Watts | |
Input impedance | 27Ω |
EFFICIENCY DIFFERENCES
The main source of the efficiency decrease was due to the 39pF Cres capacitor with 2% tolerance used within the prototype. It was found to have a measured capacitance of 40pF. A harmonic balance simulation with this value shows efficiency drops by more than 10%.
EXAMPLE DESIGN FLOW WALKTHROUGH
Operating Frequency 6.78MHZ
Target Efficiency >=85%
Device FQPF3N25 MOSFET
Datasheet located HERE on ON Semiconductor’s website
Device Parameter | Value | Class-E Design Parameter | Value | Reliability Requirement | Pass |
Cint/Cdev | 25.3pF | Cp | 415.4pF | Cp > Cint/Cdev | yes |
Vmax | 250V | Vpeak(2 x VDC x 3.6) | 172.8V | Vmax < Vpeak | yes |
Imax | 9.2A | Ipeak | 1A | Imax < Ipeak | yes |
Ideal Class-E Schematic Setup
Ideal Time and Frequency Domain Simulation
FQPF3N25 Class-E Output Matching Schematic
FQPF3N25 Class-E Output Matching Simulation Results
FQPF3N25 Class-E Input Matching Schematic
FQPF3N25 Class-E Input Matching Simulation Results